| 摘要 |
PURPOSE: Provided are a method for polishing La3Ga5SiO14-based piezoelectric ceramic single crystal wafer, which contains an etching process for minimizing the bend and the surface-roughness of the wafer caused by thermal stress of a slice process, and a silica composition for the polishing. CONSTITUTION: The silica composition for the polishing comprises 1-25wt% of silica having a particle size of 0.014 micrometer, 65-98.995wt% of water, and 0.005-10wt% of an acid, which has pH 3-4. And the polishing method contains the etching process between the slice process and the polishing process, the etching process is performed by using a mixed acid at 70deg.C for from one and half to two hours, wherein the mixed acid comprises H2SO4 and H3PO4 in the ratio of 1:10. |
