发明名称 |
Dual damascene anti-fuse with via before wire |
摘要 |
An interconnect structure in which a patterned anti-fuse material is formed therein comprising: a substrate having a first level of electrically conductive features; a patterned anti-fuse material formed on said substrate, wherein said patterned anti-fuse material includes an opening to at least one of said first level of electrically conductive features; a patterned interlevel dielectric material formed on said patterned anti-fuse material, wherein said patterned interlevel dielectric includes vias, as least one of said vias includes a via space; and a second level of electrically conductive features formed in said vias and via spaces.
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申请公布号 |
US2001036750(A1) |
申请公布日期 |
2001.11.01 |
申请号 |
US20010873537 |
申请日期 |
2001.06.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
RADENS CARL J.;BRINTZINGER AXEL C. |
分类号 |
H01L21/768;H01L21/3205;H01L21/82;H01L23/52;H01L23/525;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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