发明名称 Dual damascene anti-fuse with via before wire
摘要 An interconnect structure in which a patterned anti-fuse material is formed therein comprising: a substrate having a first level of electrically conductive features; a patterned anti-fuse material formed on said substrate, wherein said patterned anti-fuse material includes an opening to at least one of said first level of electrically conductive features; a patterned interlevel dielectric material formed on said patterned anti-fuse material, wherein said patterned interlevel dielectric includes vias, as least one of said vias includes a via space; and a second level of electrically conductive features formed in said vias and via spaces.
申请公布号 US2001036750(A1) 申请公布日期 2001.11.01
申请号 US20010873537 申请日期 2001.06.04
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 RADENS CARL J.;BRINTZINGER AXEL C.
分类号 H01L21/768;H01L21/3205;H01L21/82;H01L23/52;H01L23/525;(IPC1-7):H01L21/31 主分类号 H01L21/768
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