发明名称 Level shifter of nonvolatile semiconductor memory
摘要 A first level shifter outputs one of a first potential and a second potential lower than the first potential from an output terminal in accordance with the level of an input signal. A second level shifter outputs one of the first potential and a third potential lower than the second potential from an output terminal in accordance with the output potential from the first level shifter. A third level shifter outputs one of the first and second potentials from an output terminal in accordance with the level of the input signal. A first switching circuit selects the output voltage from the second level shifter when a high-speed operation is required such as in a read operation.
申请公布号 US2001036108(A1) 申请公布日期 2001.11.01
申请号 US20010842693 申请日期 2001.04.27
申请人 TAKANO YOSHINORI 发明人 TAKANO YOSHINORI
分类号 G11C16/06;G11C16/08;H03K19/0185;(IPC1-7):G11C11/34 主分类号 G11C16/06
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