| 摘要 |
In the formation of the wiring as a gate electrode of a polycide structure or a polymetal structure using a high melting-point metal, sharp recesses 24 on the surface of a polycrystalline silicon film 6 in the area situated the concave portions 4 generated at the ends of a trench element-isolating insulator 3 are removed. Thereafter an amorphous high melting-point metal silicide film or an amorphous high melting-point metal film via a nitride film of a high melting-point metal is formed on the flattened silicon film. Then, the amorphous high melting-point metal film or the like is crystallized to form a crystallized high melting-point metal film or the like. The polycrystalline silicon film 6a and the high melting-point metal silicide film 8 or the like are patterned to form the gate electrode of an MOS transistor. According to the manufacturing method, the occurrence of cracks in the high melting-point metal film or the high melting-point metal silicide film on a silicon film can be suppressed.
|
