A production method of silicon mirror wafer characterized in that a mirror-polished CZ silicon wafer having an interstitial oxygen concentration of up to 16 ppma is heat-treated in an atmosphere of hydrogen, argon or a mixer of these gases so that the micro-roughness of the silicon wafer is up to 1.00 nm in terms of a 2- mu m-square P-V value measured by an atomic force microscope, whereby providing a simple method for producing a silicon mirror wafer, capable of reducing grown-in defects in the vicinity of the surface of a CZ silicon wafer without sacrifice in micro-roughness and haze on the surface thereof.
