| 摘要 |
<p>A CZ silicon single-crystal wafer having an Fe concentration of 1x1010 atoms/cm3 or less, a silicon single-crystal wafer produced from a silicon single crystal grown by the CZ method by using a flow straitening tube and having an Fe concentration of 1x1010 atoms/cm3 or less, and a CZ method for producing a silicon single crystal by growing a silicon single crystal disposed in a flow straitening tube on which a film having an Fe concentration of 0.05 ppm or less is formed are disclosed. A substrate for producing a semiconductor integrated circuit device the characteristics of which do not deteriorate from even the outermost part of a wafer with high yield.</p> |
