METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication method of semiconductor devices is provided to improve a junction leakage and to prevent a spike phenomenon by using two-step annealing processes. CONSTITUTION: After forming a gate electrode(24) on a semiconductor substrate(21), spacers(25) are formed at both sides of the gate electrode(24). After forming source and drain regions(26) in the substrate, a metal film having a high melting point is formed on the resultant structure. By performing a first annealing process, a metal silicide film(28) is formed at interfaces among the metal film and the gate electrode(24) and the substrate(21). An amorphous polysilicon layer(29) is formed on the entire surface of the resultant structure. By performing a second annealing, a metal silicide film(28) having a high melting point is formed at interface between the metal silicide and the amorphous polysilicon layer(29).