RADIATION-EMITTING SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME

摘要

The invention relates to a radiation-emitting GaN-based semiconductor element whose semiconductor body is formed by a stack of different GaN semiconductor layers (1). Said semiconductor body has a first main surface (3) and a second main surface (4). The radiation that is produced is coupled out through the first main surface (3) while a reflector (6) is configured on the second main surface (4). The invention also relates to a method for producing an inventive semiconductor element. According to this method, an intermediate layer (9) is first applied to a substrate (8) and a plurality of GaN layers (1) which form the semiconductor body of the component are then applied to said intermediate layer. The substrate (8) and the intermediate layer (9) are then removed and a reflector (6) is formed on a main surface of the semiconductor body.