发明名称 |
Semiconductor device having stress reducing laminate and method for manufacturing the same |
摘要 |
A semiconductor device having a stress reducing laminate and a method for manufacturing the same. Grooves are formed on the surface of a material layer selected from a multilayer structure of the semiconductor device, for example, a conductive layer. The cross sections of the grooves are semicircular or semi-elliptic. The stress applied to the conductive layer having the grooves is divided into a vertical component and a horizontal component with respect to the surface of the conductive layer. Accordingly, the stress applied vertically to the conductive layer is reduced, making it is possible to prevent the conductive layer from cracking due to stress and to reduce the stress transmitted to material layers under the conductive layer.
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申请公布号 |
US2001035585(A1) |
申请公布日期 |
2001.11.01 |
申请号 |
US20010893456 |
申请日期 |
2001.06.29 |
申请人 |
AHN JONG-HYON;LEE CHANG-HUN |
发明人 |
AHN JONG-HYON;LEE CHANG-HUN |
分类号 |
H01L21/28;H01L23/528;H05K1/02;H05K3/46;(IPC1-7):H01L23/48;H01L23/52 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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