| 摘要 |
The invention provides a fine pattern forming method in which a pattern interval of a resist pattern is narrowed, and a fine pattern forming material can be certainly formed on a surface of the resist pattern. In the method, a first resist layer containing a material generating acid by heating or light irradiation is coated on a substrate, is exposed through a pattern, and is developed. A developing solution is washed by a washing solution to form a first resist frame, and in a state where the washing solution is adhered to the substrate, a fine pattern forming material containing a material, which is cross-linked by the existence of acid, is coated on the substrate. Acid is generated in the first resist frame by heating or light irradiation, and the first resist frame is covered with a cross-linked layer generated on an interface between the first resist frame and the fine pattern forming material.
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