| 摘要 |
The invention concerns a method for evaluating pattern defects on a wafer surface, comprising the following steps: acquiring the surface data of a plurality of individual image fields (4) of a series-produced wafer (1); storing the data in a reference data set and making it available as reference data for the inspection of further wafers of the same series; inspecting, successively in time, the individual image fields (4) on the surface of a wafer (1) presently being examined; retrieving from the reference data set a reference datum corresponding to the respective individual image field (4) presently being inspected; comparing the surface of each individual image field (4) currently being inspected to the corresponding reference datum; if one or more deviations are identified, subsequently classifying the deviations into critical and noncritical defects in terms of the functionality of the chip; and simultaneously updating or adding to the reference data set.
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