| 发明名称 |
Photodetector having a mixed crystal layer of SiGeC |
| 摘要 |
A photodetector includes a substrate and an optical absorption layer provided on the substrate, wherein the optical absorption layer is formed of a mixed crystal of Si, Ge and C.
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| 申请公布号 |
US2001035540(A1) |
申请公布日期 |
2001.11.01 |
| 申请号 |
US20010793696 |
申请日期 |
2001.02.27 |
| 申请人 |
FUJITSU LIMITED, KAWASAKI, JAPAN |
发明人 |
SUGIYAMA YOSHIHIRO;SAKUMA YOSHIKI |
| 分类号 |
H01L31/02;H01L31/0312;H01L31/107;(IPC1-7):H01L27/148;H01L29/768 |
主分类号 |
H01L31/02 |
| 代理机构 |
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| 主权项 |
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