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发明名称
Verfahren zur Herstellung eines Bipolar-Transistors
摘要
申请公布号
DE69615512(D1)
申请公布日期
2001.10.31
申请号
DE19966015512
申请日期
1996.12.04
申请人
NEC CORP., TOKIO/TOKYO
发明人
WATANABE, TAKESHI
分类号
H01L29/73;H01L21/331;H01L29/732;(IPC1-7):H01L29/73
主分类号
H01L29/73
代理机构
代理人
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地址
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