| 摘要 |
PROBLEM TO BE SOLVED: To provide, at a low cost, a sputtering target of SnO2-Sb2O3 sintered compact having high density and excellent component uniformity and suitable for deposition of transparent conductive film, with which the mechanical strength, thermal conductivity and thermal shock resistance of a sputtering target of SnO2-Sb2O3 sintered compact can be improved and the occurrence of particles and secular change on target characteristic can be reduced over the whole target life at sputtering and, as the result, a high quality film can be stably obtained. SOLUTION: In the sputtering target of SnO2-Sb2O3 sintered compact, calcination temperature of SnO2 powder used as a raw material is controlled to 750-800 deg.C to regulate specific surface area to >=(6.0 to 8.0) m2/g. Moreover, the SnO2-SbO3 sintered compact has >=6.7 g/cm3 density, and further, neither agglomerated Sb phase with a size of >=1μm nor Sb phase unentered into solid solution is present and volume resistivity is <=2.0Ωcm. A method for manufacturing this target is also provided.
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