发明名称 |
METHOD FOR INSPECTING DEFECTS OF RETICLE |
摘要 |
PURPOSE: A defect inspection method is provided to easily inspect defects of a chrome pattern formed on a reticle. CONSTITUTION: A chrome pattern is formed on a reticle(31). A simulation for detecting defects is performed against of patterns formed on a wafer by varying exposure conditions using a batch file(32). The limit of defects is classified by each layer using data achieved by the simulation(33). Then, reticle defects are inspected by using the classified data(34). The exposure conditions for the simulation are a numerical aperture, an optical source, and a size of the aperture.
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申请公布号 |
KR20010094006(A) |
申请公布日期 |
2001.10.31 |
申请号 |
KR20000017358 |
申请日期 |
2000.04.03 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
AHN, CHANG NAM;BAEK, SEUNG WON |
分类号 |
H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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