| 摘要 |
PURPOSE: A photo resist composition is provided, which comprises a photosensitive polymer provided with (meth)acrylic acid ester substituted with a naphthalene derivative as a monomer, to improve the resistance to dry etching. CONSTITUTION: The photo resist composition comprises a photosensitive polymer represented by the formula; 1-15 wt% of a photoacid generator; and optionally 0.01-2.0 wt% of an organic base. In the formula, R1 is 1-alkoxyethyl group, 1-alkoxypropyl group, tetrahydropyranyl group, t-butoxycarbonyl group, or an acetal group of C4-C14; R2 is H or a methyl group; X is H or a hydroxy group; and l/(l+m+n) = 0.4-0.9, m/(l+m+n) = 0.1-0.5, and n/(l+m+n) = 0.01-0.4. The mass mean molecular weight of the photosensitive polymer is 5,000-100,000. Preferably the photoacid generator is triarylsulfonium salt, diaryl iodine salt, sulfonate or their mixtures. |
