| 摘要 |
PURPOSE: A metal interconnection formation method is provided to minimize a damage and a loss of a lower insulating layer by etching an adhesive layer and an anti-diffusion layer using the adhesive and the anti-diffusion layer as an etch stopper. CONSTITUTION: After forming a lower insulating layer(53) on a silicon substrate(51), a contact hole is formed to expose a word line(52). An adhesive and an anti-diffusion layers(54) are formed on the resultant structure. After forming a metal film on the resultant structure, a contact plug(56) is then formed to fill into the contact hole. After depositing a metal film on the resultant structure, a metal interconnection(57b) is formed to connect the contact plug(56) by etching the metal film using the adhesive and the anti-diffusion layer(54) as an etching stopper.
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