| 摘要 |
PURPOSE: A semiconductor memory device is provided, which can remove a package size restriction by preventing increase of a layout area toward a word line in case that a memory capacity increases. CONSTITUTION: According to the semiconductor memory device, each of memory cell array blocks(10-1,10-2,10-3,10-4) comprises partial blocks((BA11,BA12,BA13,BA14,BA15,BA16),(BA21,BA22,BA23,BA24,BA25,BA26),(BA31,BA 32,BA33,BA34,BA35,BA36),(BA41,BA42,BA43,BA44,BA45,BA46)) and sub word line drivers((S11,S12,S13,S14,S15,S16,S17),(S21,S22,S23,S24,S25,S26,S27),(S31,S32,S33,S34,S35,S3 6,S37),(S41,S42,S43,S44,S45,S46,S47)). Sense amplifiers(A), data input/output gates(B), main sense amplifier driving circuits(C), sub sense amplifier driving circuits(C) and local and global data input/output gates(D) are arranged between the memory cell array blocks. And global data input/output lines(GI00,GI01,GI02,GI03) are arranged on four partial blocks located on the same position among six partial blocks of each memory cell array block. The main sense amplifier driving circuit is arranged in a block where a sense amplifier(A) is located, and the sub sense amplifier driving circuit is arranged between sub word line drivers located up and down in turn. And the local and global data input/output gate are arranged in turn between partial blocks located up and down.
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