| 发明名称 |
HIGH PURITY, SILICONIZED SILICON CARBIDE HAVING HIGH THERMAL SHOCK RESISTANCE |
| 摘要 |
<p>This invention relates to a siliconized silicon carbide-base composite comprising at least about 71 vol % converted-graphite SiC matrix having open porosity, wherein the open porosity of the matrix is essentially filled with silicon, and the composite has a total metallic impurity content of no more than 10 ppm.</p> |
| 申请公布号 |
EP1149061(A1) |
申请公布日期 |
2001.10.31 |
| 申请号 |
EP19990961623 |
申请日期 |
1999.11.09 |
| 申请人 |
SAINT-GOBAIN CERAMICS AND PLASTICS, INC. |
发明人 |
DUBOTS, DOMINIQUE;HAERLE, ANDREW |
| 分类号 |
C04B41/88;C04B35/573;C04B41/85;H01L21/26;H01L21/31;H01L21/324;(IPC1-7):C04B35/565;H01L21/02 |
主分类号 |
C04B41/88 |
| 代理机构 |
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