发明名称 VAPOR DEPOSITION METHOD FOR PERPENDICULARLY ORIENTING CARBON NANOTUBE UTILIZING LOW-PRESSURE-DC-THERMAL CHEMICAL VAPOR DEPOSITION PROCESS
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for perpendicularly orienting a pure carbon nanotube through a low-temperature-thermal chemical vapor deposition process on a large-area substrate consisting of glass or silicon at a low temperature. SOLUTION: This thermal chemical vapor deposition process for growing the carbon nanotube on the substrate by utilizing gaseous hydrocarbon includes a first step of passing the gaseous hydrocarbon through a meshed structure which consists of at least one materials among Ni, Fe, Co, Y, pd, Pt and Au or their alloys or is deposited by evaporation with these substances on the surface to effect the catalytic thermal cracking of the gaseous hydrocarbon at <=600 deg.C and a second step of disposing the substrate for electrodes which consists of at least one materials among the Ni, Fe, Co, Y, pd, Pt and Au or their alloys or is deposited by evaporation with these substances on the surface and the substrate for growing the carbon nanotube so as to face each other apart a prescribed distance, then impressing DC voltage therebetween to crack the gaseous hydrocarbon subjected to the catalytic thermal cracking described above.</p>
申请公布号 JP2001303250(A) 申请公布日期 2001.10.31
申请号 JP20010073546 申请日期 2001.03.15
申请人 SAMSUNG SDI CO LTD;RI EISHO 发明人 RI EISHO;LEE NAE-SUNG;KIN SHOMIN
分类号 H01L21/205;C01B31/02;C23C16/26;C23C16/44;C30B25/00;C30B25/02;H01J9/02 主分类号 H01L21/205
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