| 摘要 |
This invention relates to an output buffer, compatible with triple well CMOS/BiCMOS technology, which exhibits an increases ESD performance. Since the ESD energy is evacuated to ground by the output NMOS transistor, this buffer is self-protected against ESD thus exhibiting minimum output capacitance. The bias of the p-well of the triple well output NMOS transistor determines whether the NMOS transistor operates as an output active component or as an ESD protection device. An RC network, connected between the Vdd power supply line and the ground, is used for this reason, in order to trigger the NMOS transistor. Under normal biasing conditions the NMOS p-well is grounded and the NMOS operates as an output transistor. Under transient ESD conditions however, capacity coupling between the NMOS p-well and the floating Vdd power supply line turns the NMOS ESD protection on. Due to the mechanism of p-weel coupling, the whole area of the output NMOS transistor is activated under ESD stress conditions, making the output NMOS transistor an efficient and robust ESD clamp. A special case concerns open drain output buffers, in which case no direct path to the Vdd power supply line exists under ESD stress conditions. The only ESD current path is through the output NMOS transistor, which can be designed in triple well CMOS technology to offer the necessary ESD protection. A trigger subcircuit in this case includes a PMOS transistor between output and NMOS p-well, as well as a resistor between NMOS p-well and ground. |
