发明名称 Method of forming a micro structure and an X-ray mask
摘要 A method of forming a microstructure having higher aspect ratio by using a general purpose synchrotron orbital radiation apparatus is provided. A resist layer (4) mainly including a copolymer of methylmethacrylate and methacrylic acid is formed on a substrate (2). Lithography by synchrotron orbital radiation is carried out on the resist layer (4), to form a resist pattern. By carrying out normal electroplating, electroforming or the like in accordance with the resist pattern, a microstructure having high aspect ratio is obtained. <IMAGE>
申请公布号 EP0617329(B1) 申请公布日期 2001.10.31
申请号 EP19940103534 申请日期 1994.03.08
申请人 SUMITOMO ELECTRIC INDUSTRIES, LIMITED 发明人 OGINO, SEIJI;NUMAZAWA, TOSHIYUKI
分类号 G03F1/22;G03F7/00;(IPC1-7):G03F7/00;G03F1/14 主分类号 G03F1/22
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