发明名称 |
Method of forming a micro structure and an X-ray mask |
摘要 |
A method of forming a microstructure having higher aspect ratio by using a general purpose synchrotron orbital radiation apparatus is provided. A resist layer (4) mainly including a copolymer of methylmethacrylate and methacrylic acid is formed on a substrate (2). Lithography by synchrotron orbital radiation is carried out on the resist layer (4), to form a resist pattern. By carrying out normal electroplating, electroforming or the like in accordance with the resist pattern, a microstructure having high aspect ratio is obtained. <IMAGE> |
申请公布号 |
EP0617329(B1) |
申请公布日期 |
2001.10.31 |
申请号 |
EP19940103534 |
申请日期 |
1994.03.08 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LIMITED |
发明人 |
OGINO, SEIJI;NUMAZAWA, TOSHIYUKI |
分类号 |
G03F1/22;G03F7/00;(IPC1-7):G03F7/00;G03F1/14 |
主分类号 |
G03F1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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