| 摘要 |
PROBLEM TO BE SOLVED: To provide a detection method for conductor short defect location of a semiconductor and a semiconductor device having the device pattern for it. SOLUTION: The semiconductor device comprises a substrate, an insulation film provided on the substrate, segment conductor patterns 3 and 4 placed in checker, by turns in any directions of crossing two directions on the insulation film and a conductor 5 connecting the segment conductor pattern 3 to the substrate. In the method for inspecting the wiring defect locations of the semiconductor device, electron beam is cast on the segment conductor pattern and secondary electron dose discharged from the segment conductor pattern 4 is detected. By observing patterns exceeding or lowering a specific reference value with a high magnification SEM, defect locations are studied. |
