| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film forming apparatus with which a thin film of a high quality can reliably be obtained at a high speed. SOLUTION: This thin film forming apparatus employing the plasma CVD to form a thin film on a base material includes a plasma generating chamber for generating the ECR plasma to which a magnetic field is applied to a periphery thereof by a magnetic coil and into which an upstream gas is introduced with the introduction of microwaves, an inlet for supplying a downstream gas, and a mesh installed between the inlet and a polymer base material or between the plasma generating chamber and the inlet. The inlet for introducing the downstream gas in disposed so that the supplied downstream gas is uniformly distributed.
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