发明名称 |
Method for determining a unique solution for FET equivalent circuit model parameters |
摘要 |
<p>A method of uniquely extracting both intrinsic and parasitic components from a single set of measured S-parameters is useful for extracting a single set of measured S-parameters for the development of non-linear Field Effect Transistor (FET) models. Competitive extraction where multiple trial solutions are attempted spanning a region or space of feedback impedances is used. Extraction is followed by optimization that reduces the extracted values to a model that better fits measured S-parameters. Optimization can be achieved by further evaluating the speed of convergence in an error metric.</p> |
申请公布号 |
EP1150127(A2) |
申请公布日期 |
2001.10.31 |
申请号 |
EP20010110452 |
申请日期 |
2001.04.27 |
申请人 |
TRW INC. |
发明人 |
TSAI, ROGER SU-TSUNG |
分类号 |
G01R31/26;G06F17/50;H01L29/00;(IPC1-7):G01R31/26 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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