HIGH ASPECT RATIO SUB-MICRON CONTACT ETCH PROCESS IN AN INDUCTIVELY-COUPLED PLASMA PROCESSING SYSTEM,申请号EP19990968557-传众专利搜索

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发明名称	HIGH ASPECT RATIO SUB-MICRON CONTACT ETCH PROCESS IN AN INDUCTIVELY-COUPLED PLASMA PROCESSING SYSTEM
摘要
申请公布号	EP1149407(A2)	申请公布日期	2001.10.31
申请号	EP19990968557	申请日期	1999.12.28
申请人	LAM RESEARCH CORPORATION	发明人	MARQUEZ, LINDA
分类号	H01L21/28;H01L21/302;H01L21/3065;H01L21/311;H01L21/768;(IPC1-7):H01L21/00	主分类号	H01L21/28
代理机构		代理人
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