HIGH DENSITY LOW THERMAL EXPANSION CERAMIC AND MANUFACTURING METHOD THEREOF AND MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a high density low thermal expansion ceramic having low thermal expansion property, small porosity and few voids and the manufacturing method and to provide a member for semiconductor manufacturing device using the ceramic. SOLUTION: The high density low thermal expansion ceramic consists practically of eucryptite and silicon nitride and/or silicon carbide and is controlled to have <=0.5% porosity, <=10 μm maximum void diameter and <=1×10-6/ deg.C coefficient of thermal expansion at 10-40 deg.C. The ceramic constitutes the member for semiconductor manufacturing device.