| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of growing a compound semiconductor single crystal, by which the compound semiconductor single crystal can be obtained with good reproducibility, and a device using the same. SOLUTION: When the compound semiconductor single crystal can be produced by a LEC method, the compound semiconductor single crystal is produced with good reproducibility by making the inner surface of a crucible 4 smooth by polishing before growing the single crystal, then accommodating a raw material 2 for the compound semiconductor single crystal and a liquid sealant 3 in the crucible 4, further accommodating the crucible 4 in a pressure vessel 1, after filling an inert gas into the pressure vessel 1, heating the crucible 4 with a heater 5, bringing a seed crystal 6 into contact with a melt of the raw material 2 and the liquid sealant 3 and simultaneously pulling the single crystal.
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