GRINDING LIQUID COMPOSITION

摘要

PROBLEM TO BE SOLVED: To provide a grinding liquid composition capable of maintaining the grinding speed of a metal layer on a surface to be ground having an insulating layer and the metal layer, suppressing the etching speed and excellent in preventing effect for a dishing of a metal circuit layer, etc., to provide a grinding method and a method for producing a semiconductor substrate. SOLUTION: This grinding liquid for grinding the surface to be ground having the insulating layer and metal layer, contains an amine compound expressed by the following general formula (I) [wherein R1 is a 4-18C linear or branched chain alkyl, a linear or branched chain alkenyl, a 6-18C aryl or a 7-18C aralkyl; R2 and R3 may be the same or different and are each H, a 1-8C linear or branched chain alkyl or H-(OR)n (whereir R4 is a 1-3C linear chain alkylene or a 3C branched chain alkylene); and (n) is 1-20] and/or its salt, an etching agent and water.