发明名称 METHOD OF PRODUCING QUARTZ GLASS CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method of producing a quartz crucible for pulling Si single crystal, by which the quartz crucible for pulling Si single crystal hardly softening, highly viscous and almost free from deformation at a high temperature can be obtained. SOLUTION: The method of producing the quartz glass crucible having a transparent inner surface part and an opaque outer surface part and useful for pulling the Si single crystal, comprises using a mold 5 which is composed of a supporting body 2 being a cylinder with a bottom and an inside member 3, being a cylinder with a bottom, having an inner surface formed into the same shape as that of the outer surface of the crucible, gas-permeable and being inserted in the supporting body 2 while providing a ventilating space 4 between its outer surface and the inner surface of the supporting body 2, supplying a quartz powder into the inside member 3 while rotating the mold around the its axis line, forming a quartz powder deposited layer 7 having a prescribed thickness and being formed into the same shape as that of the inner surface of the inside member 3, and heating the deposited layer 7 from inside. In the method of producing the quartz glass crucible mentioned above, when heating of the quartz powder deposited layer 7 is started, the quartz powder layer is simultaneously attracted through the ventilating space 4 and kept under reduced pressure for a prescribed time and thereafter gaseous argon is supplied to the quartz powder deposited layer 7 through the ventilating space 4.
申请公布号 JP2001302391(A) 申请公布日期 2001.10.31
申请号 JP20000113916 申请日期 2000.04.14
申请人 TOSHIBA CERAMICS CO LTD 发明人 SAKIKUBO KUNIHIKO;SASAKI YASUMI
分类号 C03B20/00;C03B19/09;C30B15/10;C30B29/06;(IPC1-7):C30B29/06 主分类号 C03B20/00
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