发明名称 Lead-less semiconductor device with improved electrode pattern structure
摘要 A semiconductor device comprises : an insulating substrate have a first main face which is sealed with a sealing material ; at least a set of input and output electrode patterns provided on the first main face, and the input and output electrode patterns being separated from each other ; at least a ground electrode pattern having a ground potential, and the ground electrode pattern being separated from the input and output electrode patterns ; and at least an electrically conductive pattern extending over an inter-region between the input and output electrode patterns, and the electrically conductive pattern being separated from the input and output electrode patterns, and the electrically conductive pattern being electrically connected to the ground electrode pattern, so that the electrically conductive pattern has a ground potential. <IMAGE>
申请公布号 EP1150352(A2) 申请公布日期 2001.10.31
申请号 EP20010109942 申请日期 2001.04.24
申请人 NEC COMPOUND SEMICONDUCTOR DEVICES, LTD. 发明人 HAYASHI, KOUZI
分类号 H01L23/13;H01L23/12;H01L23/31;H01L23/498 主分类号 H01L23/13
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