发明名称 SWITCHING CIRCUIT FOR RF AMPLIFYING UNIT
摘要 PURPOSE: A switching circuit for an RF(Radio Frequency) amplifying unit is provided to reduce a consumption current for operation by selectively switching an amplifying operation about the RF amplifying unit and a no-amplified signal path by using one voltage source and two current sink ports. CONSTITUTION: The first switching diode(D11) connects to an input filter(10) at its cathode terminal through the first and second coupling condensers(CC1,CC2), connects to a bias power terminal(V1) at its anode terminal, and connects an input terminal of an RF amplifying unit(20) at its anode terminal through the third coupling condenser(CC3). The second switching diode(D12) connects to the bias power terminal(V1) at its anode terminal, connects to an output terminal of the RF amplifying unit(20) at its anode terminal through the fourth coupling condenser(CC4), and connects to an input terminal of the next circuit block at its cathode terminal through the fifth coupling condenser(CC5). The first current sink port(P1) connects to each cathode terminal of the first and second switching diodes(D11,D12). The third switching diode(D13) connects between the first and second coupling condensers(CC1,CC2) at its cathode terminal, and connects to the bias power terminal(V1) at its anode terminal. The fourth switching diode(D14) connects to the anode terminal of the third switching diode(D13) at its anode terminal, and connects to the cathode terminal of the second switching diode(D12) at its cathode terminal through the fifth coupling diode(CC5). The second current sink port(P2) connects to each cathode terminal of the third and fourth switching diodes(D13,D14).
申请公布号 KR100314627(B1) 申请公布日期 2001.10.31
申请号 KR19970066645 申请日期 1997.12.08
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 LEE, YONG GUN
分类号 H04B1/40;(IPC1-7):H04B1/40 主分类号 H04B1/40
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