| 摘要 |
A CCD solid-state image sensing device has power supply lines formed from a poly-silicon layer and a silicide layer formed on the poly-silicon layer. The silicide layer has a reduced optical reflectivity that inhibits reflections of light on a surface of the power supply line. The silicide layer is silicon combined with a refractory metal, such as tungsten, molybdenum, titanium, or the like. Further, a surface protective film is formed on the power supply lines. The surface protective film includes silicon nitride having an increased quantity of hydrogen that is supplied to an interface between a channel layer and a diffusion layer in order to promote bonding.
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