| 摘要 |
A semiconductor memory device allowing low power consumption and a high speed operation is provided. The semiconductor memory device includes a spare replacement determining circuit, a plurality of memory blocks, a plurality of sense amplifier blocks, and a plurality of selection gate controlling circuits. Normal blocks included in the memory block can be replaced and repaired by a spare block included in one of the memory blocks. The selection gate controlling circuit controls to selectively render a memory block and a sense amplifier block coupled or non-coupled. The selection gate controlling circuit simultaneously couples a normal block included in a selected memory block to a corresponding sense amplifier block as well as a spare block to a corresponding sense amplifier block prior to spare replacement determination.
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