| 摘要 |
A method of polishing a metal film which is used for forming damascene wirings or conductors by polishing a metal film formed on an insulating film having trenches thereon by using a CMP, in which excess polishing, that is, dishing, of buried conductors having large area occurring when the metal film is polished by the CMP method can be restrained. The method comprises: providing a substrate on which an insulating film is formed; forming a trench in the insulating film; forming a buried metal film portion in the trench whose width is equal to or larger than 1 micrometer; forming a first metal film on the insulating film such that the buried metal film portion is covered by the first metal film; and polishing a surface of the first metal film by using a CMP method. A lower portion of the buried metal film portion is buried in the trench whose width is equal to or larger than 1 micrometer, and at least a part of an upper portion of the buried metal film portion is located higher than the top surface of the insulating film.
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