发明名称 High-speed sense amplifier
摘要 The invention pertains to a high-speed sense amplifier and to a method to operate the sense amplifier. The sense amplifier to which a power supply voltage can be applied via a semiconductor switch can be used to amplify a binary data signal read from a memory cell and it is arranged between two mutually complementary bit lines. The load output of the semiconductor switch can be precharged with a reference voltage source, wherein the amount of the reference voltage is less than or equal to the difference of the power supply voltage and the threshold voltage of the semiconductor switch. Due to this design, the read cycles can be clearly reduced. In addition, a greater read sensitivity is possible.
申请公布号 US6310810(B1) 申请公布日期 2001.10.30
申请号 US20000615986 申请日期 2000.07.14
申请人 JAIN RAJ KUMAR 发明人 JAIN RAJ KUMAR
分类号 G11C7/06;G11C7/12;G11C11/4091;(IPC1-7):G11C7/00 主分类号 G11C7/06
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