发明名称 |
Method for fabricating silicon thin film |
摘要 |
This invention provides a method for fabricating a silicon thin film which is high in supply efficiency of silicon material. In the method for fabricating a silicon thin film by placing a silicon semiconductor single crystal substrate in a process vessel and by supplying a silicon material into the process vessel, a wall of the process vessel is cooled so that silicon tetrachloride (SiCl4) concentration in an exhaust gas discharged from the process vessel during a growth process of a silicon thin film becomes equal to or lower than {fraction (1/10)} of a concentration of the silicon material in the exhaust gas. Also, the wall of the process vessel is cooled so that temperature gradient between a surface of the semiconductor single crystal substrate and the wall of the process vessel satisfies the following Equation (1) in relation to a temperature of the semiconductor single crystal substrate:
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申请公布号 |
US6309458(B1) |
申请公布日期 |
2001.10.30 |
申请号 |
US19990267696 |
申请日期 |
1999.03.15 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
HABUKA HITOSHI;AKIYAMA SHOJI;OTSUKA TORU |
分类号 |
H01L21/205;C23C16/24;C23C16/44;C30B25/02;C30B29/06;H01L21/20;(IPC1-7):C30B25/14 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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