| 摘要 |
A row command unit is contained in an integrated circuit including a plurality of memory banks. The row command unit includes a plurality of row control latches, each row control latch having an output coupled to a respective memory bank and having an enable terminal and a control terminal. Each row control latch latches a signal applied on the control terminal when an active enable signal is applied on the enable terminal. A delay circuit has an output terminal coupled to the control terminals of the row control latches and has an input terminal. The delay circuit generates a row control signal on its output responsive to an activation signal applied on its input. A bank control circuit is coupled to the input terminal of the delay circuit and has input terminals adapted to receive respective bank address and bank control signals. The bank control circuit also has a plurality of output terminals, each output terminal being coupled to a respective enable terminal of one of the row control latches. The bank control circuit is operable to apply an active enable signal to one of the row control latches and to apply an active activation signal to the delay circuit responsive to the bank control and bank address signals. The row command unit may be contained in a packetized memory device including a plurality of memory banks coupled to respective row control latches. A row command unit according to one aspect of the present invention utilizes a reduced number of timing chain or delay circuits to access rows in a large number of memory banks.
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