发明名称 Integrated circuit inductor with high self-resonance frequency
摘要 An integrated circuit inductor structure that includes a shielding pattern that induces a plurality of small eddy currents to shield the magnetic energy generated by the inductor from the substrate of the IC. The IC inductor structure is formed on a Silicon on Insulator (SOI) substrate where the substrate of the SOI has high resistivity. The shielding pattern forms a checkerboard pattern that includes a plurality of conducting regions completely isolated from each other by oxide material. The inductor has a high quality factor and a high self-resonance frequency due to the effective shielding of electromagnetic energy from the substrate of the IC while not reducing the effective inductance of the inductor.
申请公布号 US6310387(B1) 申请公布日期 2001.10.30
申请号 US19990304137 申请日期 1999.05.03
申请人 SILICON WAVE, INC. 发明人 SEEFELDT JAMES DOUGLAS;HULL CHRISTOPHER D.
分类号 H01L23/522;H01L23/528;H01L23/64;(IPC1-7):H01L29/00 主分类号 H01L23/522
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