发明名称 |
Integrated circuit inductor with high self-resonance frequency |
摘要 |
An integrated circuit inductor structure that includes a shielding pattern that induces a plurality of small eddy currents to shield the magnetic energy generated by the inductor from the substrate of the IC. The IC inductor structure is formed on a Silicon on Insulator (SOI) substrate where the substrate of the SOI has high resistivity. The shielding pattern forms a checkerboard pattern that includes a plurality of conducting regions completely isolated from each other by oxide material. The inductor has a high quality factor and a high self-resonance frequency due to the effective shielding of electromagnetic energy from the substrate of the IC while not reducing the effective inductance of the inductor.
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申请公布号 |
US6310387(B1) |
申请公布日期 |
2001.10.30 |
申请号 |
US19990304137 |
申请日期 |
1999.05.03 |
申请人 |
SILICON WAVE, INC. |
发明人 |
SEEFELDT JAMES DOUGLAS;HULL CHRISTOPHER D. |
分类号 |
H01L23/522;H01L23/528;H01L23/64;(IPC1-7):H01L29/00 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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