发明名称 |
Low temperature sacrificial oxide formation |
摘要 |
A method for depositing a sacrificial oxide for fabricating a semiconductor device includes preparing p-doped silicon regions on a semiconductor wafer for depositing a sacrificial oxide on the p-doped silicon regions. The method also includes the step of placing the wafer in an electrochemical cell such that a solution including electrolytes interacts with the p-doped silicon regions to form a sacrificial oxide on the p-doped silicon regions when a potential difference is provided between the wafer and the solution. Processing the wafer using the sacrificial oxide layer is also included.
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申请公布号 |
US6309983(B1) |
申请公布日期 |
2001.10.30 |
申请号 |
US19990324926 |
申请日期 |
1999.06.03 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
MICHAELI ALEXANDER;KUDELKA STEPHAN |
分类号 |
H01L21/316;H01L21/8242;H01L27/108;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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