| 摘要 |
During standby, bit lines BL1 and /BL1 are precharged, and the potentials of word lines WL1 and WL2 are set at a potential slightly higher than a ground potential. Since a stable retaining current flows through an access transistor into a node inside a memory cell holding the H level, the data can be retained with stability. Moreover, during an access, the selected word line is brought to the H level, while the unselected word lines are brought to a ground potential.
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