发明名称 Electric voltage source for semiconductor components
摘要 A semiconductor component comprising a layer of semiconductor material that is doped region-by-region in alternating fashion for positive and negative electrical conductivities. This layer is arranged perpendicular to layer surfaces between thermally conductive layers in such a way that the junctions between two successive regions having different electrical conductivities are electrically insulated outwardly, and are alternately in thermal contact with one of the thermally conductive layers and are thermally insulated from the respective other thermally conductive layer.
申请公布号 US6310280(B1) 申请公布日期 2001.10.30
申请号 US19990403185 申请日期 1999.10.18
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 AIGNER ROBERT;HIEROLD CHRISTOFER;SCHMIDT FRANK
分类号 H01L23/58;H01L35/00;H01L35/22;H01L35/32;(IPC1-7):H01L35/28 主分类号 H01L23/58
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