| 摘要 |
A sample is inspected by moving to a first field associated with a first group of test structures, which are partially within the first field, which is scanned to determine whether there are any defects present. If defects are present a specific defect location is determined by repeatedly stepping to areas and scanning such areas within the first group of test structures. In a second method, a sample is scanned in a first direction and in a second direction at an angle to the first direction with at least one particle beam. The number of defects per area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. A semiconductor die includes test structure located entirely within a scanning area and only partially within the scanning area. The test structures are arranged so that a scan of the scanning area results in detection of defects outside of the scanning area. |
