| 摘要 |
PURPOSE: To improve a semiconductor device with a connection member in productivity. CONSTITUTION: A first polyimide film 11 with an opening 11a that makes a pad P exposed is formed on a wafer W. The surface of the first polyimide film is subjected to a surface modification treatment, and than a thin conductor film 21a is formed through an ion exchange reaction. The thin conductor film 21a is turned thick by electrolytic plating, by which a thick conductor film which is satisfactory in adhesive properties and low resistance is formed. A second polyimide film 12 is formed on the thick conductor film 21, an opening 12a is provided to the second polyimide film 12 at a position which avoids the opening 11a and a bump B is formed inside the opening 12a by electrolytic plating. |
