| 摘要 |
PURPOSE: A contact plug formation method is provided to prevent a volcano phenomenon and to simplify the manufacturing process by forming a barrier layer of the contact plug using an ionized metal plasma method. CONSTITUTION: After forming an insulating layer(31) on a silicon substrate(30) having transistors, a lower wire(32) is formed on the insulating layer(31). By depositing and patterning an intermetal dielectric layer(33), a via hole is formed to expose portions of the lower wire(32). A tungsten barrier layer(340) is deposited on the exposed lower wire(32) by using an advanced physical vapor deposition, such as an ionized metal plasma method. A tungsten film is then filled into the via hole. By selectively etching the tungsten film and the barrier layer, a tungsten plug(350) is formed. A lower arc layer(36) is deposited on the exposed barrier layer(340), plug(350) and intermetal dielectric layer(33) so as to improve an adhesion. An upper wire(37) and upper arc layers(38,39) are sequentially formed on the lower arc layer.
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