发明名称 APPARATUS FOR SENSING BEAM CURRENT OF BEAM GATE FOR ION IMPLANTATION
摘要 PURPOSE: A beam current sensing apparatus of a beam gate used for an ion implantation is provided to exactly check the beam current by protecting a sensing line of the beam current from contaminations. CONSTITUTION: A beam gate(40) is formed in a processing chamber(3a) so as to check a beam current. A moving substance(50) is connected to the beam gate(40) for moving the beam gate. A cylinder assembly(60) has a rotating axis(62) and a rotating substance(64). By driving the rotating axis(62) and the rotating substance(64) of the cylinder assembly(60), the moving substance(50) is converted to a linear motion due to a link substance(70). A sensing line(80) is then expanded and sensed the beam current according to the movement of the beam gate(40). A protection cap(100) is covered to the sensing line(80), thereby preventing the sensing line(80) from contaminations.
申请公布号 KR20010093342(A) 申请公布日期 2001.10.29
申请号 KR19990060401 申请日期 1999.12.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, CHEOL MIN
分类号 H01L21/265;(IPC1-7):H01L21/265 主分类号 H01L21/265
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