发明名称 |
APPARATUS FOR SENSING BEAM CURRENT OF BEAM GATE FOR ION IMPLANTATION |
摘要 |
PURPOSE: A beam current sensing apparatus of a beam gate used for an ion implantation is provided to exactly check the beam current by protecting a sensing line of the beam current from contaminations. CONSTITUTION: A beam gate(40) is formed in a processing chamber(3a) so as to check a beam current. A moving substance(50) is connected to the beam gate(40) for moving the beam gate. A cylinder assembly(60) has a rotating axis(62) and a rotating substance(64). By driving the rotating axis(62) and the rotating substance(64) of the cylinder assembly(60), the moving substance(50) is converted to a linear motion due to a link substance(70). A sensing line(80) is then expanded and sensed the beam current according to the movement of the beam gate(40). A protection cap(100) is covered to the sensing line(80), thereby preventing the sensing line(80) from contaminations.
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申请公布号 |
KR20010093342(A) |
申请公布日期 |
2001.10.29 |
申请号 |
KR19990060401 |
申请日期 |
1999.12.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, CHEOL MIN |
分类号 |
H01L21/265;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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