发明名称 WET-CLEANING APPARATUS AND WET-ETCHING METHOD
摘要 PURPOSE: To obtain a wet-cleaning apparatus and wet-etching method, that can reduce fluctuation in product characteristics by making uniform the amount of etching in a wafer, when using etching liquid, such as a fluoric acid to etch a wafer an oxide film in wet cleaning treatment and the like. CONSTITUTION: A means for improving uniformity of etching is provided, where the means is provided in a cleaning tank 16, and turns a wafer 18 along a prescribed circumferential direction at a prescribed speed in an arbitrary period during the circulation of the cleaning liquid, so that wet treatment throughput on the wafer 18 lies within an approximately specific range.
申请公布号 KR20010093683(A) 申请公布日期 2001.10.29
申请号 KR20010015057 申请日期 2001.03.23
申请人 SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. 发明人 FUJIWARA KEIJI
分类号 B08B3/04;B08B3/08;C23F1/08;H01L21/304;H01L21/306;(IPC1-7):H01L21/304 主分类号 B08B3/04
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