发明名称 SEMICONDUCTOR MEMORY HAVING MEMORY CELL FIELD
摘要 PURPOSE: A semiconductor memory having a memory cell field is to provide a memory composed of a memory cell and the memory cell field, by embodying a folded bit line for a memory cell smaller than 8F2. CONSTITUTION: The first memory cell(14) is composed of the first select transistor(16) and the first memory capacitor. The second memory cell(15) is composed of the second select transistor(17) and the second memory capacitor. The semiconductor memory includes the memory cell field(13) having the first and second memory cells. The first select transistor is an n-channel transistor and the second select transistor is a p-channel transistor. The first and second memory cells formed in a silicon on insulator(SOI) substrate including an insulation layer.
申请公布号 KR20010093742(A) 申请公布日期 2001.10.29
申请号 KR20010016229 申请日期 2001.03.28
申请人 INFINEON TECHNOLOGIES AG 发明人 HOFFMANN FRANZ
分类号 H01L21/762;H01L21/76;H01L21/8242;H01L27/092;H01L27/108;(IPC1-7):H01L21/824 主分类号 H01L21/762
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