| 摘要 |
An apparatus for producing a planar plasma in a low pressure process gas includes a chamber (12) and an external planar coil (20). Radiofrequency resonant current is induced in the planar coil which in turn produces a planar magnetic field within the enclosure. The magnetic field causes circulating flux of electrons which in turn produces a planar region of ionic and radical species. The system may be used for plasma treatment of a variety of planar articles, typically semiconductor wafers which are oriented parallel to the plasma within the enclosure. |
