| 摘要 |
PURPOSE: To provide a semiconductor device which inhibits occurrence of a difference of a well separating voltage between a corner part and a straight part in a wall region boundary, and which can be miniaturized without relaxing the design rule in a condition of ensuring a desired well isolating voltage. CONSTITUTION: A semiconductor device comprises a semiconductor substrate 10, an n-type diffused layer 14 formed selectively on a surface layer part of the semiconductor substrate, a p-well region formed to surround the n-type diffused layer on the surface layer part of the semiconductor substrate, and an n-well region 14 formed on the surface layer part of the semiconductor substrate to be adjacent to the p-well region. A corner part C1 having the p-well domain in the interior angle side, exists in a part of a boundary pattern between the p-well region and the n-well region, and at least one side of two sides of this corner part is formed to project into the n-well region side from the corner vertex over the predetermined length by a predetermined width (d) and a predetermined length (1).
|
